APV – Effect on Halcogenide Thin Curtains

Authors

  • Onarkulov Karimberdi Egamberdiyevich Fergana state university Professor of the department physics
  • Naymanboyev Rakhmonali Fergana branch of Tashkent university of information technology Docent of the department physics
  • Yuldashev Shohjaxon Abrorovich Fergana state university, doctoral student
  • Yuldashev Abror Abduvositovich Fergana state university Teacher of the department physics

DOI:

https://doi.org/10.31150/ajshr.v2i9.613

Keywords:

Halcogenide, APV effect, anisotropic evaporation, heterofotoelement

Abstract

The article presents the results of volt – ampere and temperature experiments conducted on chalcogenide thin films. Based on them, it was found that in the chalcogenide thin films there are non-homogeneous areas of a series of chains consisting of periodic repeating p-n-junctions. No interaction, charge exchange, or “transistor effect” is observed between adjacent p-n junctions in these fields. APV-effect occurs in specimens of chalcogenide thin films with very high resistance (R≥108 Ohm).

References

Патент Германи, ЕС-01-002992

Ж.И.Алфёров и др. ФТП, 2004, т.38, вып.8, стр.937

Германия патенти №ЕС-01-001725, май, 18, 2018

Uzbek Journal of Physics, 2017. Vol. 19 №5 p.p-302-306

Computational nanotechnologi, издательский дом «Юр-ВАК», г.Москва №2, 2018 g., s.72-76

П.Т.Орешкин «Физика полупроводников и диэлектриков» Мсоква, изд-во «Высщая школа» стр. 278 1977

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Published

2021-11-27

How to Cite

Egamberdiyevich, O. K. ., Rakhmonali, N. ., Abrorovich, Y. S. ., & Abduvositovich, Y. A. . (2021). APV – Effect on Halcogenide Thin Curtains. American Journal of Social and Humanitarian Research, 2(9), 87–91. https://doi.org/10.31150/ajshr.v2i9.613

Issue

Vol. 2 No. 9 (2021): AJSHR

Section

Articles

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